Memristive devices, such as ReRAM devices, enable Computation-In-Memory operations such as vector-matrix multiplications, which are basic kernels for neuromorphic computing. These devices, however, suffer from parasitic sneak path currents in memory arrays, which make a satisfactory performance on large-scale arrays impossible. To overcome this issue, for example, a bipolar rectifying element (‘select device’) in series to a resistive switching device (1S1R) is introduced at each cross-point junction. In this work, we investigate the design of 1S1R arrays for VMM operations and show the impact of wire resistances on these operations. We derive guidelines that give a quantitative relationship between the array size, wire resistance values, resistance states of the ReRAM and the select device and resulting current levels.