Profile

Aibin Yan received a Ph.D from Hefei University of Technology, China, and a M.S. degree from the University of Science and Technology of China (USTC), Hefei, in 2015 and 2009, respectively. He joined Anhui University, Hefei, in 2016. Currently, He is an associate professor with Anhui University. From 2018 to 2019, he visited the WEN Lab, Kyushu Institute of Technology, Japan, under the support of China Scholarship Council (CSC), and under the supervision of Prof. Xiaoqing WEN. He has published about 50 papers including IEEE ToC, IEEE TCASI, IEEE TCASII, IEEE TETC, IEEE TAES, IEEE TRel, IEEE TVLSI, IEEE DAC, IEEE DATE, etc. His research interests mainly include radiation hardening by design for nano-scale CMOS ICs such as latches, flip-flops, and memory cells.