A novel temperature compensated class-AB dynamic residue amplifier based on MOS parametric amplification to be used in high-speed SAR-assisted pipeline ADCs is discussed in this paper. The proposed circuit has been designed in a 28-nm standard CMOS process with a 0.9-V nominal power supply. The simulated class-AB fully-dynamic parametric amplifier has an open-loop nominal gain of 6× V/V, while dissipates 550 μW at 1 GS/s. It achieves a gain variation bounded to 3% across the temperature range of -40 ºC to 125 ºC. and it reaches a power-to-conversion-speed ratio better than 5.5 × 10-13 W/Hz representing a factor of about 4 times of energy-efficiency improvement when compared with the state-of-the-art.