Details
Presenter(s)
![Khoirom Johnson Singh Headshot](https://confcats-catavault.s3.amazonaws.com/CATAVault/ieeecass/master/files/styles/cc_user_photo/s3/user-pictures/15621.jpg?h=fbf7a813&itok=HFuf0mfK)
Display Name
Khoirom Johnson Singh
- Affiliation
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AffiliationIndian Institute of Technology Roorkee
- Country
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CountryIndia
Abstract
The concept of leveraging the transient negative capacitance (TNC) effect in a ferroelectric (FE) is a relatively new addition to the field of nanoelectronics. Until now, there has been no comparison of organic and oxide FE-based metal-FE-metal (MFM) devices in harnessing the TNC effect. As a result, we introduce an external resistor-MFM (R-MFM) series circuit to investigate the role of organic and oxide FEs in harnessing the TNC effect at low supply voltages. The multidomain Ginzburg-Landau-Khalatnikov theory is used to model the FE materials in a technology computer-aided design environment.