In life-critical applications like automobile systems, functional safety is of utmost importance. Early diagnosis of unforeseen faults and failures in the memory subsystem is necessary to prevent any potential threat to life. It is observed that Electromigration induced ageing failures such as open and short resistive defects pose extreme reliability concerns in the safe operation of SRAMs. This paper analyzes the consequences of resistive defects in the Write Driver periphery circuit in 65nm technology node. In the presence of defects in a conventional write driver circuit using a Negative BL scheme, the writability and the bit line discharge level degrades, eventually leading to write errors. We propose a process compensated circuit to detect and locate small resistive faults, as low as 3-4KOhm, in SRAM write drivers, before they result in functional failure. The test circuit can be easily integrated with the memory BIST.