Details
Presenter(s)
![Shady Agwa Headshot](https://confcats-catavault.s3.amazonaws.com/CATAVault/ieeecass/master/files/styles/cc_user_photo/s3/user-pictures/23111_1.jpg?h=743bf4af&itok=t3XOFfif)
Display Name
Shady Agwa
- Affiliation
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AffiliationUniversity of Southampton
- Country
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CountryUnited Kingdom
Abstract
This paper focuses on a different perspective of building high-density and digital-friendly RRAM-based memory that is a good alternative to the SRAM-based Last-Level Caches LLCs. This digital RRAM-based memory with conventional 1T1R bit-cells is proposed to be an on-chip gigantic data reservoir, with much higher density than SRAMs, to bridge the memory gap. The paper also shows that the digital RRAM-based memory is capable of doing robust bit-line compute which opens the door for digital in-memory computing architectures that can mitigate the Von Neumann bottleneck while adopting RRAM\'s high-density promise.