A heterogeneously integrated novel double-sided cooling silicon carbide power module design is proposed. The details of the integrated SOI gate driver chips, decoupling capacitors, temperature, and current sensors are explained. The main contribution of this design is a very low inductance design with high system power density (136 kW/L) due to having the necessary control and sensing circuitry within the power module housing. Power loop inductance of only 1.5 nH gives a voltage overshoot of only 8.75% according to simulations. Power module package thermal resistance of only 0.06 K/W is one of the lowest obtained values in the literature.