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Video s3
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    Presenter(s)
    Saion Kumar Roy Headshot
    Display Name
    Saion Kumar Roy
    Affiliation
    Affiliation
    University of Illinois at Urbana Champaign
    Country
    Author(s)
    Display Name
    Saion Kumar Roy
    Affiliation
    Affiliation
    University of Illinois at Urbana Champaign
    Display Name
    Ameya Patil
    Affiliation
    Affiliation
    University of Illinois at Urbana Champaign
    Display Name
    Naresh Shanbhag
    Affiliation
    Affiliation
    University of Illinois at Urbana Champaign
    Abstract

    This paper determines the fundamental limits on the compute SNR of MRAM-, ReRAM-, and FeFET-based crossbars by employing statistical signal and noise models. The maximum compute SNR is shown to occur at an optimum value of sensing resistance. SNR can be further improved by choosing devices with higher resistive contrast, but only until the range 12-15. Beyond this, mismatch in the input digital-to-analog converters and bitcell variations begin to dominate the compute SNR. Finally, by mapping a ResNet-20 (CIFAR-10) network onto resistive crossbars, it is shown that the array-level compute SNR maximizing circuit parameters also maximizes the network-level accuracy.

    Slides
    • Fundamental Limits on the Computational Accuracy of Resistive Crossbar-Based In-Memory Architectures (application/pdf)