In exascale computing, a huge amount of data is processed in real-time. Conventional CMOS-based computing paradigms follow the read, compute, and write back mechanism, which consumes significant power and time to compute and store data. in situ computation - where data are processed within the memory system - is considered a platform for exascale computation. A spin transfer torque perpendicular magnetic tunnel junction (PMTJ) is a nonvolatile memory device with several potential advantages (fast read/write, high endurance, and CMOS compatibility) to become a next generation memory solution. PMTJ offers the possibility of constructing both standalone and embedded RAM as well as MTJ-based VLSI computing. The double magnetic tunnel junction (DMTJ) is an emerging device composed of two serially connected PMTJs. In this paper, a DMTJ-based multi-bit memory cell that also provides a nonvolatile logic compute capability paradigm is presented. The multi-level cell provides both a high speed read/write multi-bit memory cell and a nonvolatile AND, OR, and NOT logic gate that computes and stores input data in real-time with a delay of 70 ns in a 32 nm CMOS technology node.