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Video s3
    Details
    Presenter(s)
    Jingjing Lan Headshot
    Display Name
    Jingjing Lan
    Affiliation
    Affiliation
    Institute of Microelectronics, Agency for Science, Technology and Research
    Country
    Author(s)
    Display Name
    Jingjing Lan
    Affiliation
    Affiliation
    Institute of Microelectronics, Agency for Science, Technology and Research
    Affiliation
    Affiliation
    Agency for Science, Technology and Research
    Display Name
    Wong Ming Ming
    Affiliation
    Affiliation
    Agency for Science, Technology and Research
    Display Name
    Li Fei
    Affiliation
    Affiliation
    Agency for Science, Technology and Research
    Display Name
    Yuan Gao
    Affiliation
    Affiliation
    Institute of Microelectronics, Agency for Science, Technology and Research
    Affiliation
    Affiliation
    Institute of Microelectronics, Agency for Science, Technology and Research
    Display Name
    Anh Tuan Do
    Affiliation
    Affiliation
    Agency for Science, Technology and Research
    Abstract

    A compact and energy-efficient AES accelerator for area and power-constrained IoT applications was fabricated in a 40nm CMOS process. By eliminating the need of intermediate data registers for MixColumns and ShiftRows in our proposed AES accelerator, we were able to reduce the total flip-flops to only 269 bits. Further, by reusing functional blocks and swapping the D flip-flops in data storage with scan flip-flops, our chip occupies only a tiny area of 1800 μm2 with an extremely low number of 657 gates. In addition, clock gating method and near-threshold voltage were used in our design. Thus, our accelerator consumes only 3.2 μW with an operation efficiency of 953 Gbps/W using a 0.48 V supply voltage. Compared with prior arts, our design has savings of 53% on area and 55% on the number of gates. When operated with a supply voltage of 0.48 V at 25°C, we can also achieve 2.1× energy efficiency improvement.

    Slides
    • A 1800µm², 953Gbps/W AES Accelerator for IoT Applications in 40nm CMOS (application/pdf)