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Video s3
    Details
    Presenter(s)
    HUA CHEN Headshot
    Display Name
    HUA CHEN
    Affiliation
    Affiliation
    Institute of Microelectronics of Chinese Academy of Sciences
    Country
    Author(s)
    Display Name
    HUA CHEN
    Affiliation
    Affiliation
    Institute of Microelectronics of Chinese Academy of Sciences
    Abstract

    This paper proposes an ultra-high-gain wideband CMOS transimpedance amplifier (TIA) for driving the ultrahigh-motional-resistance MEMS resonator. A phase compensator made by a tunable capacitor and resistors provides a lead phase
    compensation for the TIA. Moreover, the compensator produces a stable input bias voltage for the inverted-based Cherry Hooper amplifier, whose output bias is stabilized by tunable transistors. The common-gate amplifier uses a high-resistance load resistor to ensure a gain of 80 dBΩ, and the Cherry-Hooper amplifier uses a high-gm inverter and a high feedback resistor to provide a gain of 35 dB. A dual power supply of 1.2/1.8 V was used to save power. Based on the 0.18 μm CMOS process, the TIA simulation shows the gain is 118 dBΩ, the bandwidth is 190 MHz, the input-referred current noise is 20.9 pA/√Hz, and the power without test buffer is only 0.45 mW. The MEMS oscillator starts up within 0.5 ms with a swing of 1.128 Vp-p, and the phase noise is -96.59 dBc/Hz, 99.2 dBc/Hz at 10 kHz and 100 kHz offset, respectively.

    Slides
    • A 118 dBΩ 190 MHz CMOS Transimpedance Amplifier Using Phase Compensator for MEMS Beam Oscillator (application/pdf)