Details
Presenter(s)
![Stefan Pechmann Headshot](https://confcats-catavault.s3.amazonaws.com/CATAVault/ieeecass/master/files/styles/cc_user_photo/s3/user-pictures/92561.jpg?h=afc76fbb&itok=KTpXFujU)
Display Name
Stefan Pechmann
- Affiliation
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AffiliationTechnical University of Munich
- Country
Abstract
A read circuit design for RRAM memory cells suited for technologies with small resistance windows and resistance ratios. The analog read method used in this design enables reading multiple states with small resistance windows. It can be adapted to other RRAM technologies and shows a high degree of versatility.