An anti-overcharged high-dV/dt-immunity capacitive level shifter with dynamic discharge control (DDC) for half-bridge GaN driver is proposed in this paper. The proposed Level shifter is fabricated in a 0.18-µm BCD process and occupies an active chip area of 0.034mm2. Simulation results demonstrate that the propagation delay is 0.68ns at 50V level shifting and keeps almost constant when the floating ground ranges from -3V to 50V. The positive dV/dt immunity is 300V/ns. The negative dV/dt is 170V/ns under the condition that the level shifting capacitor does not discharge to floating power supply.