Profile

Daniel Krüger was born in Kaiserslautern, Germany, in 1993. He received the B.S. and M.S. degrees in electrical engineering from the University of Stuttgart, Germany, in 2016 and 2018. He has started pursuing the Ph.D. degree with the Institute of Smart Sensors, University of Stuttgart, Germany in 2019 and is currently a Fellow in Prof. Donhee Ham’s lab at Harvard University, Cambridge, MA, USA.

His current research interests include mixed-signal integrated circuits and CMOS RF transceivers for nuclear magnetic resonance (NMR) and electron spin resonance (ESR).