Profile

Mohamed Faragalla received the B.Sc. degree in Electrical Engineering from the Faculty of Engineering, Ain Shams University, Cairo, Egypt, in 2017 and the M.Sc. degree in Microelectronics and Microsystems from Hamburg University of Technology, Hamburg, Germany, in 2019. Since 2019, he is pursuing a Ph.D. degree in Electrical Engineering and Electronics from Hamburg University of Technology, Hamburg, Germany.

Mohamed was awarded the SICK-Wissenschaftspreise, 2019 for his outstanding M.Sc. thesis from Gisela und Erwin Sick foundation. He also received a one-year scholarship for academic performance from the Free and Hanseatic City of Hamburg in 2018.

In 2016, he spent a 6-month internship at the Center of Nanoelectronics and Devices, the American University in Cairo, Cairo, Egypt as an Undergraduate Research Assistant working on implementing a FinFET standard-cell library for synchronous/asynchronous digital design and physical unclonable functions for hardware security applications.

His current research interests focus on low power circuit design for medical implants.