Profile

Rosana Rodriguez received the Ph. D. in Electrical Engineering from Universitat Autonoma de Barcelona (UAB) in 2000. Funded by the Fulbright program, she worked on devices and circuits reliability at the IBM Thomas J. Watson Research Center (USA). Currently, she is an associate professor at the UAB. Her research is focused on the variability and reliability of advanced CMOS devices. She is interested in the electrical characterization and modeling of process-related and time-dependent variability sources as Random Telegraph Noise (RTN) and aging mechanisms such as Bias Temperature instability (BTI) and Hot Carrier Injection (HCI). Her research includes the study of the variability impact on the performance of single devices and digital and analogical circuits. She is also interested in the characterization of resistive switching devices (memristors) and their application for non-volatile memories, computing, and neuromorphic applications.