This work presents two 4-bit resistor-string digital-to-analog converters (R-DAC) designed in 22nm FDSOI technology. Both DACs are connected to a shared resistor string to make the final layout more compact. The small on-resistance of the Transmission-Gate (TG) switches designed in the FDSOI node yields a low Internal nonlinearity (INL) and Differential nonlinearity (DNL) in the DACs output. The effect of thetemperature variations on the linearity performance of the DACs is also studied. It is shown that the temperature gradients can be compensated for by equally distributing the switches on the layout area. Post-layout simulations show an approximately fixed INL and DNL of, respectively, 0.17LSB and 0.1LSB over awide temperature range from −40◦C to 125◦C. Two R-DACs dissipate the static/dynamic power of 0.12/0.155mW with the layout size of only 70μm^2, showing the best performance for 4-bit DACs reported to-date.