Details
Presenter(s)
![Hassan Aziza Headshot](https://confcats-catavault.s3.amazonaws.com/CATAVault/ieeecass/master/files/styles/cc_user_photo/s3/user-pictures/11141.jpg?h=1665ee4a&itok=909atwTf)
Display Name
Hassan Aziza
- Affiliation
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AffiliationIM2NP, Aix-Marseille Université
- Country
Abstract
In this paper, a novel test structure consisting of an array of non-addressable 1T-1R RRAM memory cells with parallel connection of all memory elements is introduced. The test structure can be used as a powerful tool for process variation monitoring during a new process technology introduction and also for marginal cell populations detection during process maturity. The test structure is designed to measure RRAM parameters of interest based on a simple measurement methodology: from the transfer characteristic measured under the select transistor clamping bias, it is possible to obtain accurate information on the RRAM switching parameters as well as the ON/OFF resistance values.