This paper presents a transconductance boosting method with stacked current-reused inverter base gain cell for ultra-low power RF applications. For the same bias current, the proposed method can boost the conventional inverter-based amplifier transconductance by 2X, an overall 4X boosting compared to a single MOSFET in sub-threshold region. Apost-layout level implementation of the LNA including an on-chip matching network shows a 1.3dB better noise figure as single inverter implementation for the same power of 45uW. A cross-coupled stacked-gm VCO implementation achieves 44% higher voltage swing as that of the cross coupled single inverter at 74uW.