Most of the previous investigations are dealing with the derivation of memristor models in voltage-current V-I domain. Recently, the flux-charge ∅-Q approach has been introduced by Corinto showing the capability to simulate the behaviour of a memristive device for a wide range of input signals. A simple memristor model for neuromorphic ReRAM devices derived in the flux-charge domain will be proposed in this paper. Thereby, special attention has been paid to the switching kinetics of a ReRAM memristive device excited by pulses of different height and width. The obtained theoretical results which have been compared to measurements exhibit a high accuracy in all treated cases, thus supporting the development of memory and logic applications using ReRAM elements.