We present a Two-bits-cell based NAND-Like MRAM(TBC-NAND MRAM). The structure is composed of several stacking cells sharing the same heavy metal and each cell is composed of two MTJs. The proposed writing scheme can achieve ultra-fast speed, energy-efficiency and field-free. To take advantage of the Two-bits-cell in the our structure, a multifunctional sensing circuit is proposed to sense data and to implement logic and add operations. Finaly, we analyze the area overhead , writing energy/latency, sensing reliability in details.Our structure show a good potential to be applied in the ultrafast and high density memory applications.