Emerging Non-Volatile Memories (NVMs) including resistive RAM (ReRAM), phase-change memory (PCM), and magnetic RAM (MRAM), have opened up new pathways for the NVM-based reconfigurable computing. Those NVMs technologies can achieve significant energy-efficient computational operations with only minor modification of the peripheral circuits. However, the supported operations are limited by the array structure and low energy-efficiency of implementing the computation using the memory array. In this paper, the Spin-Orbit torque-MRAM based polymorphic circuits are proposed to support the reconfigurable computation for reducing the power consumption and improving the functionalities of the single memory array. With the high speed and energy-efficiency write operation, the proposed memory array support both read-out and write-in reconfigurable operations.