PUFs have emerged as an alternative to traditional Non-Volatile Memories in the field of hardware security. In this paper, a novel PUF is proposed that uses the Random Telegraph Noise phenomenon as the underlying source of entropy. This phenomenon manifests as discrete and random shifts in the drain current of transistors and it is characterized by several parameters like the number of the defects in the device, as well as the emission and capture time constants and current shifts of these defects. Using the recently reported Maximum Current Fluctuation metric, it is possible to condense all this information and use it for the PUF design. By forming pairs of transistors, measuring, and comparing their Maximum Current Fluctuation over a given time interval, we demonstrate that it is possible to obtain a PUF. Furthermore, the results reported here show that this RNT-based PUF meets, and even outperforms, other silicon PUFs in terms of uniqueness, unpredictability, and reliability with an evident advantage in silicon area.