For the first time, this paper proposes a novel circuit design of dynamic 2-input XNOR gate that merely employs two n-type Fully-Depleted Silicon on Insulator (nFDSOI) FETs and one additional precharging pFDSOI FET. Our analysis for 14nm FDSOI technology, fully calibrated with industrial measurements, demonstrates 8x improvement in the propagation delay along with 17x improvement in power compared to the conventional dynamic XNOR design. Finally, we investigate the critical role that the thickness of the buried oxide box in FDSOI plays in the performance of our design, showing how an optimal thickness can be obtained towards even further efficiency improvements.