This paper provides an overview of modelling tech- niques for improving the design and simulation of electron injection into silicon CMOS charge-based quantum dot arrays at cryo- genic temperatures. We demonstrate initial results of quantum point contact pre-charge simulations using Verilog-A based on 22-nm FD-SOI MOSFET measurement results. We then describe the difficultly of building semiconductor models at cryogenic temperatures and report initial room temperature results. The paper concludes by suggesting future work needed for a cohesive model of injection and confinement in cryogenic quantum dot arrays.