This paper proposes a novel Magnetic Tunnel Junction (MTJ)-based Analog to Digital Converter (ADC). The Spin-Orbit Torque (SOT) mechanism is used to set the MTJ state. The simulations were performed to 3-bit and 4-bit resolution using a 28nm CMOS FDSOI design-kit. The obtained results indicate that the proposed MTJ-based ADC consumes 37.3fJ and 66.1fJ for 3-bit and 4-bit resolution, respectively outperforming other ADC designs presented in the literature. In addition, the proposed MTJ-based ADC has a independent read port for each MTJ increasing the read reliability.