Skip to main content
Video s3
    Details
    Presenter(s)
    Moataz Medhat Headshot
    Display Name
    Moataz Medhat
    Affiliation
    Affiliation
    Cairo University
    Country
    Author(s)
    Display Name
    Moataz Medhat
    Affiliation
    Affiliation
    Cairo University
    Display Name
    Faisal Hussien
    Affiliation
    Affiliation
    Cairo University
    Display Name
    Mohamed Elghonemy
    Affiliation
    Affiliation
    Cairo University
    Display Name
    Ahmed Mohieldin
    Affiliation
    Affiliation
    Galala University
    Abstract

    Design of fully-integrated push-pull class E/Fodd power amplifier for NarrowBand Internet of Things. Cascode switch is utilized with source switching instead of gate switching to accommodate the high drain voltage stress. Proposed PA is implemented using a 40 nm CMOS process with a 3.3 V supply for the core and a 1.2 V supply for the driver stage. Post-layout simulations show that the PA achieves peak power added efficiency of 58.13 % at peak output power of 31.12 dBm for the target frequency band 824-849 MHz. It also achieves a linear performance for the non-constant envelope signal imposed by the Single Carrier Frequency Division Multiple Access with an average power added efficiency of 43.85 %.

    Slides
    • A Fully-Integrated 40nm CMOS 58.1% PAE Push-Pull Class E/Fodd Power Amplifier for NB-IoT Applications (application/pdf)