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Presenter(s)
Display Name
Stefan Slesazeck
- Affiliation
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AffiliationNaMLab gGmbH
- Country
Abstract
Ferroelectric tunneling junctions (FTJ) are considered to be the intrinsically most energy efficient memristors. In this work, specific electrical features of ferroelectric hafnium-zirconium oxide based FTJ devices are investigated. Moreover, the impact on the design of FTJ-based circuits for edge computing applications is discussed by means of two example circuits.