In this paper, domain specific ReRAM-based Computation-in-Memory (CiM) design for simulated annealing (SA) is proposed. This paper reveals that the influence of bit precision and memory cell errors of ReRAM CiM on the accuracy for SA depends on the domains of combinatorial optimization problems, such as Max-Cut and Knapsack problems. It is found that Max-Cut problem has smaller circuit structure and is 3-bit higher tolerant of bit precision, but 4% lower bit-error rate (BER) tolerant, compared with Knapsack problem. By considering the requirements of bit precision and BER from each domain, the proposed domain specific ReRAM CiMs are best optimized.