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Video s3
    Details
    Presenter(s)
    Yu Wang Headshot
    Display Name
    Yu Wang
    Affiliation
    Affiliation
    Tianjin University
    Country
    Country
    China
    Author(s)
    Display Name
    Yu Wang
    Affiliation
    Affiliation
    Tianjin University
    Display Name
    Fanyi Meng
    Affiliation
    Affiliation
    Tianjin University
    Display Name
    Kaixue Ma
    Affiliation
    Affiliation
    Tianjin University
    Display Name
    Min Lu
    Affiliation
    Affiliation
    ZTE Corporation
    Abstract

    This paper presents a 21.5-to-36 GHz 6-bit radio frequency variable gain amplifier (RF-VGA) for the fifth generation (5G) communication phased-arrays in 0.13-µm SiGe BiCMOS technology. To maintain a wideband stable power gain and accurate gain control under all operation states, the two-stage amplifier comprising a cascode amplifier with RC compensating network and a common emitter amplifier is designed and realized. The measured results reveal a wide gain tuning range of -16 to 16 dB, a gain resolution of 0.5 dB with 6-bit digital control, a minimum RMS gain error of 0.04 dB only, 3-dB bandwidth of 13.5 GHz, output P1dB compression point of 9.3 dBm, and total DC power consumption of 23.5 mW under 1.6V supply. The chip area is 0.64×0.4 mm2 excluding the testing pads. To the best of the authors’ knowledge, it achieves the best FOM among similar reported VGAs.

    Slides
    • Design of a dB-Linear 21.5-to-36 GHz 6-Bit RF-VGA with Accurate Gain Control in 0.13-µm SiGe BiCMOS Technology (application/pdf)