We propose a computing in-memory (CiM) paradigm based on spin-transfer torque magnetic random access memory (STT-MRAM), which combines common read-like mode (RLM) and write-like mode (WLM). On the basis of realizing the basic functions AND/OR/NAND/NOR, our design coordinates the high speed of RLM and the integrity of WLM to perform complex operations like full-adder (FA) and XOR/XNOR. In addition, the high speed and low power consumption of the proposed CiM paradigm are established by circuit-level simulation with a 40 nm design kit.