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Video s3
    Details
    Presenter(s)
    Saman Fatima Headshot
    Display Name
    Saman Fatima
    Affiliation
    Affiliation
    CentraleSupélec, Laboratoire de Génie Electrique et Electronique de Paris
    Country
    Abstract

    Specific Infrared (IR) detection systems are a solution for non-invasive monitoring of polymer aging in electrical power plants. For such application, the target photo-detector has a low shunt impedance of 40Ω and produces a large photo-current of 60uA. This paper proposes a readout circuit designed in XFAB 0.18um technology. Based on a CMDI architecture, a bi-cascode current mirroring direct injection circuit is proposed. It offers a 98% charge injection efficiency. The structure performs the DC current cancellation and integrate the resulting current in a 20pF capacitance. The 20us duration pulses are integrated with a linearity error of 0.01%

    Slides
    • A CMOS Readout Circuit for a Low Shunt Resistance IR Photo-Detector (application/pdf)