Semiconductor qubits appear the best positioned in the race for fully integrated quantum computing cores incorporating both the quantum dot structures and the electronics necessary to read and control the qubit states. Nevertheless, one of the major limitations hampering the efforts is the lack of MOSFET models compatible with commercial EDA tools that can accurately predict the effects of cryogenic temperatures, necessary to operate the quantum dots, on its electrical parameters. To achieve such models, the devices must be measured at that extremely low temperatures and over a wide range of operating conditions. This paper presents preliminary characterisation results of devices used in a quantum processing unit in a 22-nm fully depleted silicon-on-insulator FD-SOI process, and simulation results using a Verilog-A model based on the measured I-V curves for different FD-SOI transistors.