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    Details
    Author(s)
    Display Name
    Fuyue Qian
    Affiliation
    Affiliation
    Zhejiang University
    Display Name
    Xiaowei Zhang
    Affiliation
    Affiliation
    Zhejiang University
    Display Name
    Yanye Chen
    Affiliation
    Affiliation
    Zhejiang University
    Display Name
    Jianxiong Xi
    Affiliation
    Affiliation
    Zhejiang University
    Display Name
    Qinwei Zhu
    Affiliation
    Affiliation
    Silicon Power Microelectronics Co., Ltd
    Display Name
    Lenian He
    Affiliation
    Affiliation
    Zhejiang University
    Abstract

    This paper proposes a BJT-based temperature sensor with a 16-bit SAR ADC fabricated in a standard 55-nm CMOS process. It obtains a resolution of 0.04 °C and a resolution figure of merit (FoM) of 5.12 pJ·K² with the utilization of a 16-bit SAR ADC. The sensor takes 0.1 ms to complete a round of conversion. The switched-capacitor amplifier is applied to scale up the input range of the SAR ADC and improve the effective dynamic range. The sensor achieves an accuracy of ± 0.6 °C from - 40 °C to 125 °C. It occupies an area of 0.234 mm2 and draws a current of 6.4 uA (analog front end) from a 1.2-V supply voltage.