Details
Presenter(s)
Display Name
Sunrui Zhang
- Affiliation
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AffiliationKey Lab of Integrated Microsystems, Peking University Shenzhen Graduate School
- Country
Abstract
This paper proposes a new memristive LUT with the CIM style. The proposed LUT has a constant circuit area regardless of the number of input variables, and its circuit delay increases linearly with the number of input variables. The Monte Carlo simulation results show that the resistance variation has little influence on the proposed LUT, thanks to the ESL cells. The proposed memristive LUT is area efficient and robust.