This paper studies the impact of aging and electromigration on mixed-signal CMOS ICs in 22nm FDSOI technology. Recently, this technology has received much attention in many emerging high-speed and RF applications such as 5G wireless chipsets due to its planar structure and fin field-effect transistor (FinFET)-like performance. A StrongARM latched comparator and an 8-bit monotonic Successive Approximation Register (SAR) Analog-to-digital Converter (ADC), designed for a 5G vehicle-to-everything (V2X) wireless chipset, are used as case studies in this paper. SPICE simulation results show that the 22nm FDSOI process exhibits a robust performance in terms of aging and electromigration. The aging impacts the performance of the comparator by only 1.1% over 20 years. Similarly, for the SAR-ADC, the electromigration impact is minimized by ensuring that the current density at every node does not exceed the threshold value at high temperatures. This demonstrates that the lifetime and operating conditions of chips designed in 22nm FDSOI are enhanced for critical applications such as autonomous vehicles, cloud computing, data centers, and edge IoTs.