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Video s3
    Details
    Presenter(s)
    Samriddhi Agarwal Headshot
    Display Name
    Samriddhi Agarwal
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Country
    Country
    India
    Author(s)
    Display Name
    Samriddhi Agarwal
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Display Name
    Ashutosh Pathy
    Affiliation
    Affiliation
    International Institute of Information Technology Hyderabad
    Display Name
    Zia Abbas
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Abstract

    This paper proposes an ultra-low-power current reference in TSMC 180nm technology. Temperature compensation is achieved by taking the ratio of compensated voltage and an on-chip resistance. This design uses the concept of the back-gate effect of critical MOSFET to generate complementary to absolute temperature (CTAT) voltage. The circuit works from a supply voltage of 0.55V and is designed for a reference current of 5.6nA. Furthermore, a pseudo-differential amplifier (PD-AMP) helps realize low line regulation of 0.022%/V in the supply range of 0.55V to 1.9V. An average temperature coefficient (TC) of 256.07ppm/°C is achieved for mismatch and process variations in Monte-Carlo simulations for 1000 samples over a temperature range of -30°C to 70°C. The circuit consumes only 9.5nW of power (at room temperature and minimum supply voltage), making it suitable for ultra-low-power biomedical applications.

    Slides
    • A 9.5nW, 0.55V Supply, CMOS Current Reference for Low Power Biomedical Applications (application/pdf)