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Video s3
    Details
    Author(s)
    Display Name
    Jingbo Shi
    Affiliation
    Affiliation
    Peking University
    Display Name
    Han Liu
    Affiliation
    Affiliation
    Institute of Semiconductors, Chinese Academy of Sciences
    Display Name
    Tao Yang
    Affiliation
    Affiliation
    Peking University
    Display Name
    Ming Jin
    Affiliation
    Affiliation
    Peking University
    Display Name
    Haowen Shu
    Affiliation
    Affiliation
    Peking University
    Display Name
    Fenghe Yang
    Affiliation
    Affiliation
    Peking University
    Display Name
    Lei Shi
    Affiliation
    Affiliation
    Southwest Minzu University
    Display Name
    Yuansheng Tao
    Affiliation
    Affiliation
    Peking University
    Display Name
    Jiangrui Deng
    Affiliation
    Affiliation
    Peking University
    Display Name
    Ruixuan Chen
    Affiliation
    Affiliation
    Peking University
    Display Name
    Changhao Han
    Affiliation
    Affiliation
    Peking University
    Display Name
    Jian Liu
    Affiliation
    Affiliation
    Institute of Semiconductors, Chinese Academy of Sciences
    Display Name
    Nanjian Wu
    Affiliation
    Affiliation
    Chinese Academy of Sciences
    Display Name
    Nan Qi
    Affiliation
    Affiliation
    Chinese Academy of Sciences
    Display Name
    Liyuan Liu
    Affiliation
    Affiliation
    Chinese Academy of Sciences
    Abstract

    A 800G integrated silicon-photonic transmitter is presented, including a 16-channel photonic integrated chip (PIC) and two electrical chiplets (EICs) that are realized based on an arrayed travelling wave dual-drive Mach-Zehnder modulator (MZM) and two 8-channel CMOS drivers. The proposed multi-channel PIC is fabricated on a high-resistance silicon-on-insulator (SOI) wafer with a 220 nm thick silicon layer and a 2 μm thick buried oxide (BOX) using the foundry-ready CMOS process, while the drivers are implemented in a standard 65nm CMOS process. The driver employs a combination of distributed architecture, 2-tap feedforward equalization (FFE) and push-pull output stage, experimentally exhibiting an averaged bandwidth higher than 28.5GHz and a differential swing of 4.0Vpp on 50Ω load, respectively. The 50Gb/s electrical eye-diagram is measured with 1.41ps rms-jitter, while the optical extinction ratio (ER) exceeds 3.0dB with 5.35pJ/bit power efficiency.