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Video s3
    Details
    Presenter(s)
    Saeed Naghavi Headshot
    Display Name
    Saeed Naghavi
    Affiliation
    Affiliation
    Aalto University
    Country
    Author(s)
    Display Name
    Ali Raza Saleem
    Affiliation
    Affiliation
    Aalto University, Finland
    Display Name
    Saeed Naghavi
    Affiliation
    Affiliation
    Aalto University
    Display Name
    Mahwish Zahra
    Affiliation
    Affiliation
    Aalto University
    Display Name
    Kari Stadius
    Affiliation
    Affiliation
    Aalto University
    Display Name
    Marko Kosunen
    Affiliation
    Affiliation
    Aalto University
    Display Name
    Lauri Anttila
    Affiliation
    Affiliation
    Tampere University
    Display Name
    Mikko Valkama
    Affiliation
    Affiliation
    Tampere University
    Display Name
    Jussi Ryynänen
    Affiliation
    Affiliation
    Aalto University
    Abstract

    This paper presents a transmitter IC with two identical signal paths, including base-band amplifier, up-converting mixer, and power amplifier stages. The design is focused on wide modulation bandwidth, and the use of a resonatorless small die-area class-D power amplifier at cm-wave frequencies. This work also incorporates a local oscillator signal distribution network with phase tuning elements. The circuit is implemented in a 22-nm CMOS process, and the active die area is 0.8 mm2. Operation over the 6-20 GHz range of carrier frequencies through the transmission of both continuous wave (CW) and wideband quadrature phase shift keying (QPSK) modulated signals were verified with measurements. Results with 20/40/100, and 400 MHz modulation bandwidths are presented, and for instance for a 20-MHz QPSK modulated input signal the measured ACLR of the transmitter is 28 dBc and EVM is 5%.

    Slides
    • A 6-20 GHz 400-MHz Modulation-Bandwidth CMOS Transmitter IC (application/pdf)