Skip to main content
Video s3
    Details
    Presenter(s)
    Sangwoo Ha Headshot
    Display Name
    Sangwoo Ha
    Affiliation
    Affiliation
    Korea Advanced Institute of Science and Technology
    Country
    Author(s)
    Display Name
    Sangwoo Ha
    Affiliation
    Affiliation
    Korea Advanced Institute of Science and Technology
    Display Name
    Sangjin Kim
    Affiliation
    Affiliation
    Korea Advanced Institute of Science and Technology
    Display Name
    Donghyeon Han
    Affiliation
    Affiliation
    Korea Advanced Institute of Science and Technology
    Display Name
    Soyeon Um
    Affiliation
    Affiliation
    Korea Advanced Institute of Science and Technology
    Display Name
    Hoi-Jun Yoo
    Affiliation
    Affiliation
    Korea Advanced Institute of Science and Technology
    Abstract

    In this work, the high SNR and energy-efficient eDRAM-CIM macro is proposed with three features: 1) High SNR voltage-based accumulation with segmented BL architecture (SBLA), resulting in 17.1 dB higher SNR, 2) canceling PVT/leakage-induced error with common-mode error canceling (CMEC) circuit, resulting in 51.4% PVT variation reduction and 51.4% refresh power reduction, 3) a ReLU-based zero-gating ADC (ZG-ADC), resulting in ADC power reduction up to 58.1%. From these features, the proposed eDRAM-CIM achieves 81.5-to-115.0 TOPS/W energy-efficiency in 4b×4b MAC with 250 MHz. The proposed macro also achieves 91.52% accuracy at the CIFAR10 dataset (ResNet-20) without accuracy drop under PVT variation.

    Slides
    • A 36.2 dB High SNR and PVT/Leakage-Robust eDRAM Computing-in-Memory Macro with Segmented BL and Reference Cell Array (application/pdf)