This paper proposes a dual-path CMOS RF-to-DC rectifier operating at 2.45-GHz. A new rectifier based on all NMOS rectification devices is proposed for high-power path and a modified cross-connected rectifier is designed for low-power path. The control signal for path switching is adaptively generated by auxiliary circuits. Implemented in a 0.18-μm standard CMOS technology, the dual-path rectifier achieved a sensitivity of −20.7 dBm. It has two peak PCEs of 57% and 62% at -15 dBm and 1.6 dBm. The PCE of the rectifier can be maintained above 20% with a 27 dB input range from −22 to 5 dBm.