Details
Presenter(s)
Display Name
Yunhong Kim
- Affiliation
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AffiliationSamsung Electronics Inc.
- Country
Abstract
This paper presents implementation of a CMOS image sensor with a 65nm CMOS process. The pixel array consists of 13Mp in 1.12um pixel pitch. The fabricated sensor uses 10-bit column-parallel single slope analog-to-digital converters (ADCs) based on a low-power counter architecture. Furthermore, to avoid test over-kills, a low-power built-in self-test (BIST) is proposed. The proposed image sensor achieves a frame rate of 120 frames/s, 2e-rms temporal random noise, dynamic range is 65.2dB, 0.18% peak integral non-linearity and 0.26LSB peak differential non-linearity. Total chip power consumption is only 99.7mW at 30frames/s movie mode.