This paper presents a 120 GHz receiver for Near-Field IoT sensors, without the conventional LNA and mixers building blocks. A new technique for the reduction of the low-frequency 1/f noise is also presented. The technique is used to improve the sensitivity of the 120GHz receiver with a data rate of 100kb/s, by lowering the 1/f noise corner frequency. The technique involves the complementary switching of two MOSFET transistors in order to effectively act as a single MOSFET transistor. It also involves the isolation of the drain terminals of these identical MOSFET transistors in order to eliminate any electric field from the complementary transistors which may affect the de-trapping process. The complementary switching in the literature has only been applied to low-frequency circuits with the highest operating frequency being 120 kHz. The proposed technique leads to a 9dB reduction in the drain current noise at frequencies up to 100 kHz. Realized in a 65nm CMOS LPE technology from GF, the receiver has a measured sensitivity of -46dBm, power consumption of 52 uW, and energy efficiency of 5.2pJ/bit. The occupied on-chip area is 0.56mm2.