Novel non-volatile memory devices based on ferro- electric thin films represent a promising emerging technology that is ideally suited for neuromorphic applications. The physical switching mechanism in such films is the nucleation and growth of ferroelectric domains. Since this has a strong dependence on both pulse width and voltage amplitude, it is important to use precise pulsing schemes for a thorough characterization of their behavior. In this work, we present an on-chip 120 dB programmable range pulse generator, that can generate pulse widths ranging from 10ns to 10ms ±2.5% which eliminates the RLC bottleneck in the device characterization setup. We describe the pulse generator design and show how the pulse width can be tuned with high accuracy, using Digital to Analog converters. Finally, we present experimental results measured from the circuit, fabricated using a standard 180nm CMOS technology.