This paper presents a 1/1.33-inch 108Mp (mega-pixel) CMOS image sensor (CIS) for mobile applications. It is a 3D-stacked CIS designed with 0.8um unit pixels having dual conversion gain (DCG). This work in which the NONACELL technology is applied proves large-pixel effect which provides improved performance in low lux condition at submicron pixels. The number of photodiodes increases due to the NONACELL technology, the full well capacity (FWC) can be increased due to the proposed DCG technology as well. In addition, in the proposed high dynamic range (HDR) structure, image can be displayed with a frame rate that is 3 times higher than traditional 3D-HDR.