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Video s3
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    Presenter(s)
    Lantao Wang Headshot
    Display Name
    Lantao Wang
    Affiliation
    Affiliation
    RWTH Aachen University
    Country
    Author(s)
    Display Name
    Lantao Wang
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Running Guo
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Johannes Bastl
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Jonas Meier
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Michael Hanhart
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Tim Lauber
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Alexander Meyer
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Ralf Wunderlich
    Affiliation
    Affiliation
    RWTH Aachen University
    Display Name
    Stefan Heinen
    Affiliation
    Affiliation
    RWTH Aachen University
    Abstract

    This paper presents a low-noise low dropout regulator (LNLDO) implemented in a 28 nm technology. The LNLDO features a two-stage architecture, using a low-pass filter with a very low cut-off frequency to separate the regulation loop and the noisy devices such as resistive divider and bandgap reference. Supplied by 1.5 V ~ 1.8 V input voltage, the LNLDO is able to provide a stable output voltage ranging from 0.73 V to 1.71 V, with 90 mV dropout voltage. The LDO can provide a current from 0 to 35 mA. An on-chip capacitance enhancer is used to stabilize the regulation loop without an additional external capacitor. The RMS noise from 10 Hz to 100 kHz of the LNLDO is below 20 uV.

    Slides
    • A 0.73-to-1.71 V Capacitor-Less Low-Noise Low-Dropout Regulator in 28-nm CMOS (application/pdf)