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![Lantao Wang Headshot](https://confcats-catavault.s3.amazonaws.com/CATAVault/ieeecass/master/files/styles/cc_user_photo/s3/user-pictures/80711.jpg?h=52be58f6&itok=BJ-614Oz)
Display Name
Lantao Wang
- Affiliation
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AffiliationRWTH Aachen University
- Country
Abstract
This paper presents a low-noise low dropout regulator (LNLDO) implemented in a 28 nm technology. The LNLDO features a two-stage architecture, using a low-pass filter with a very low cut-off frequency to separate the regulation loop and the noisy devices such as resistive divider and bandgap reference. Supplied by 1.5 V ~ 1.8 V input voltage, the LNLDO is able to provide a stable output voltage ranging from 0.73 V to 1.71 V, with 90 mV dropout voltage. The LDO can provide a current from 0 to 35 mA. An on-chip capacitance enhancer is used to stabilize the regulation loop without an additional external capacitor. The RMS noise from 10 Hz to 100 kHz of the LNLDO is below 20 uV.