This paper presents a current reference using temperature-compensated CMOS resistors. In the proposed circuit, the constant current is generated by compensating complementary-to-absolute-temperature (CTAT) and proportional-to-absolute-temperature (PTAT) CMOS resistors. The CMOS CTAT resistor is designed using a MOS biased in the deep-triode region. In contrast, the PTAT resistor is derived using the MOS biased in the sub-threshold triode region with a V TH -tracking voltage. The reference current is generated using a 3T regulator and the temperature-compensated CMOS resistors. The sensor prototype is designed in 180 nm for 172 pA of reference current (I REF ) at a temperature coefficient (TC) of 327 ppm/ ◦ C from 0 ◦ C to 80 ◦ C. It has 0.63 nW power consumption at 1.1 V supply with an average line sensitivity of 0.63 %/V when operated from 1.1 V to 2.1 V supply voltage.