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    Details
    Author(s)
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Affiliation
    Affiliation
    Delft University of Technology and Scientific Director of QuTech
    Display Name
    Arnab Dey
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Display Name
    Inhee Lee
    Affiliation
    Affiliation
    University of Pittsburgh
    Display Name
    Zia Abbas
    Affiliation
    Affiliation
    International Institute of Information Technology, Hyderabad
    Abstract

    The paper presents a 0.5V supply, gate leakage-based current/voltage reference for ultra-low power IoT and biomedical applications. The references are generated by the proper addition of PTAT and CTAT curves, which are obtained by exploiting the traditional architecture of the beta multiplier and using the body biasing effect. Gate leakage transistors replace the resistors to ensure low power and low area. The circuit doesn’t involve any Op-Amps avoiding the issues of offset that are prominent in these circuits. Implemented in CMOS 90nm technology, the proposed current (voltage) reference achieves a typical accuracy of 34.6ppm/0C (29.68ppm/0C) over a wide temperature range of -55oC to 75oC with typical value 63.32pA(0.35V). Excellent line sensitivity of 0.0318%/V and 0.0576%/V are observed for voltage and current reference, respectively, in a supply range of 0.5V - 2.3V. The area occupied by the total circuit is 0.0096mm2, while the power consumption is 415pW at the typical corner of 27oC and 0.5V supply.