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Video s3
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    Presenter(s)
    Qiao Cai Headshot
    Display Name
    Qiao Cai
    Affiliation
    Affiliation
    Shanghai Jiao Tong University
    Country
    Abstract

    Circuits based on tunneling FET (TFET) devices are fueling the beyond CMOS logic design, meeting the ultra-low-power demands for Internet-of-Things (IoT) applications. This paper presents a highly energy-efficient hybrid TFET/FinFET level shifter (LS) circuit, providing a robust signal up-conversion from deep subthreshold voltage. A pulse-triggered dynamic fully-regenerative latch and two modified dynamic current generators are incorporated to overcome the timing variation of input differential signals and current contention in the cross-coupled circuit. The simulation results show that the hybrid TFET/FinFET LS circuit has achieved a consistent propagation delay, dynamic power consumption, and power-delay-product (PDP) of ≤378 ps, ≤39.6 µW, and ≤13,950 ns · nW, respectively while converting the input signal from the ultra-low-voltage of sub-50mV to the nominal supply voltage of FinFET (0.8-1.2V). The proposed architecture has achieved up to 2.71-to-15.99× improvement in PDP compared to the reported state-of-the-art LS architectures.

    Slides
    • An Ultra-Low-Voltage Energy-Efficient Dynamic Fully-Regenerative Latch-Based Level-Shifter Circuit with Tunnel-FET & FinFET Devices (application/pdf)