This paper proposes an almost constant, programmable, and extremely high (Tera ohm) Complementary MOS pseudo-resistor cell. A theoretical proof is developed and precisely matches the simulation results and confirms the implementation of high resistance, considering the symmetric dynamic range and the simplicity of the realization. Different bio-medical amplifiers as applications of the proposed pseudo-resistor are demonstrated to verify the effectiveness of the high linearity performance, lower cutoff frequency controllability, and process variations compensation. The proposed cell and the bio-medical amplifiers are designed and simulated using 90 nm CMOS technology, BSIM4, level 54.